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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BF620; BF622 NPN high-voltage transistors
Product data sheet Supersedes data of 1999 Apr 21 2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES * Low current (max. 50 mA) * High voltage (max. 300 V). APPLICATIONS * Video output stages. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BF621 and BF623. PINNING PIN 1 2 3 emitter collector base
BF620; BF622
DESCRIPTION
2
MARKING TYPE NUMBER BF620 BF622 MARKING CODE DC DA
3 2 1
3 1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF620 BF622 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BF620 BF622 VCEO collector-emitter voltage BF620 BF622 VEBO IC ICM IBM Ptot emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb 25 C note 1 note 2 note 3 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature - - - open collector open base - - - - - - PARAMETER collector-base voltage CONDITIONS open emitter - -
BF620; BF622
MIN.
MAX. 300 250 300 250 5 50 100 50 0.5 0.8 1.1 +150 150 +150
UNIT V V V V V mA mA mA W W W C C C
-65 - -65
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
1600 Ptot (mW) 1200
(1)
006aaa238
800
(2)
(3)
400
0 -75
-25
25
75
125 175 Tamb (C)
(1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Dec 14
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 note 3 Rth(j-s) Notes thermal resistance from junction to soldering point
BF620; BF622
VALUE 250 156 113 30
UNIT K/W K/W K/W K/W
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
103 Zth (K/W) 102
006aaa235
(1) (3) (2) (4) (5) (6) (7)
10
(8) (9) (10)
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; standard footprint. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 14
5
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
103 Zth (K/W)
(1)
006aaa236
102
(2) (3) (4) (5) (6)
10
(7) (8) (9) (10)
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
103 Zth (K/W) 102
(1) (3) (5) (6) (2) (4)
006aaa237
10
(7) (8) (9) (10)
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 14
6
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS IE = 0 A; VCB = 200 V IE = 0 A; VCB = 200 V; Tj = 150 C IC = 0 A; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0 A; VCE = 30 V; f = 1 MHz IC = -10 mA; VCE = 10 V; f = 100 MHz - - - 50 - - 60
BF620; BF622
MIN.
MAX. 10 10 50 - 600 1.6 -
UNIT nA A nA mV pF MHz
2004 Dec 14
7
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
BF620; BF622
SOT89
D
B
A
bp3
E
HE
Lp 1 2 bp2 wM bp1 e1 e 3 c
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 JEITA SC-62
EUROPEAN PROJECTION
ISSUE DATE 04-08-03 06-03-16
2004 Dec 14
8
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BF620; BF622
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 14 9 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/04/pp10 Date of release: 2004 Dec 14 Document order number: 9397 750 13867

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